Structural phase transition in monolayer gold(I) telluride: From a room-temperature topological insulator to an auxetic semiconductor

نویسندگان

چکیده

Structural phase transitions between semiconductors and topological insulators have rich applications in nanoelectronics but are rarely found two-dimensional (2D) materials. In this work, by combining ab initio computations evolutionary structure search, we investigate two stable 2D forms of gold(I) telluride (${\mathrm{Au}}_{2}\mathrm{Te}$) with square symmetry, noted as s(I)- s(II)-${\mathrm{Au}}_{2}\mathrm{Te}$. s(II)-${\mathrm{Au}}_{2}\mathrm{Te}$ is the global minimum a room-temperature insulator. s(I)-${\mathrm{Au}}_{2}\mathrm{Te}$ direct-gap semiconductor high carrier mobilities unusual in-plane negative Poisson's ratio. Both s(I) s(II) phases ultralow Young's modulus, implying flexibility. By applying small tensile strain, can be transformed into s(I)-${\mathrm{Au}}_{2}\mathrm{Te}$. Hence, structural transition from insulator to an auxetic ${\mathrm{Au}}_{2}\mathrm{Te}$, which enables potential phase-change electronic devices. Moreover, elucidate mechanism help phonon spectra group theory analysis.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Corrigendum: Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe

In Fig. 2a and d of this Article, a uniform background subtraction was applied to the ARPES low-energy electronic structure measurements. In Fig. 2d, this background subtraction unintentionally was only applied to the central part of the figure. This affected the noise in the background but not the meaningful signal data features discussed in the paper, and therefore does not affect any conclus...

متن کامل

Structural Phase Transition Accompanied by Metal - Insulator Transition in PrRu4P12

A structural phase transition has been found using electron diffraction technique in PrRu4P12 accompanied by a metal insulator (M I) transition (TMI = 60K). Weak superlattice spots appeared at (H, K, L) (H + K + L = 2n + 1; n is an integer) position at a temperature of T = 12 K and 40 K. Above T = 70 K, the spots completely vanished. The space group of the low temperature phase is probably Pm 3...

متن کامل

Metal-insulator transition in a doped semiconductor

Millikelvin measurements of the conductivity as a function of donor density and uniaxial stress in bulk samples of phosphorus-doped silicon establish that the transition from metal to insulator is continuous, but sharper than predicted by scaling theories of localization. The divergence of the dielectric susceptibility as the transition is approached from below also points out problems in curre...

متن کامل

Strain-induced topological insulator phase transition in HgSe

Lars Winterfeld,1,2 Luis A. Agapito,1 Jin Li,1 Nicholas Kioussis,1,* Peter Blaha,3 and Yong P. Chen4 1Department of Physics, California State University, Northridge, California 91330-8268, USA 2Institut für Physik, University of Technology Ilmenau, 98684 Ilmenau, Germany 3Institute for Materials Chemistry, TU Vienna, A-1060 Vienna, Austria 4Department of Physics, Purdue University, West Lafayet...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Physical review

سال: 2021

ISSN: ['0556-2813', '1538-4497', '1089-490X']

DOI: https://doi.org/10.1103/physrevb.103.075429